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N25Q128A13ESE40G |
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表面贴装 |
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128Mbit |
SPI |
SOIC W |
8 |
4M x 32 位 |
NOR |
2.7 V |
3.6 V |
对称 |
4M |
5ns |
32Bit |
5.49 x 5.49 x 1.91mm |
5.49mm |
-40 °C |
85 °C |
5.49mm |
1.91mm |
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JS28F256M29EWLA |
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表面贴装 |
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256Mbit |
并行 |
TSOP |
56 |
16M x 16 位,32M x 8 位 |
NOR |
2.7 V |
3.6 V |
对称 |
16M, 32M |
110ns |
8/16Bit |
18.4 x 14 x 1mm |
14mm |
-40 °C |
85 °C |
18.4mm |
1mm |
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M29W256GSH70ZS6F TR |
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非易失 |
闪存 |
FLASH - NOR |
256Mb (32M x 8,16M x 16) |
70ns |
70ns |
并联 |
2.7 V ~ 3.6 V |
-40°C ~ 85°C(TA) |
表面贴装 |
64-LBGA |
64-FBGA(11x13) |
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符合限制有害物质指令(RoHS)规范要求 |
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JR28F064M29EWTA |
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表面贴装 |
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64Mbit |
并行 |
TSOP |
48 |
4M x 16 位,8M x 8 位 |
NOR |
2.7 V |
3.6 V |
对称 |
4M, 8M |
70ns |
8/16Bit |
18.4 x 12 x 1mm |
12mm |
-40 °C |
85 °C |
18.4mm |
1mm |
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MT29F1G08ABAFAWP-ITE:F TR |
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非易失 |
闪存 |
FLASH - NAND |
1Gb (128M x 8) |
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并联 |
2.7 V ~ 3.6 V |
-40°C ~ 85°C(TA) |
表面贴装 |
48-TFSOP(0.724",18.40mm 宽) |
48-TSOP |
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符合限制有害物质指令(RoHS)规范要求 |
5 周 |
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MT29F1G08ABBFAH4-ITE:F TR |
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非易失 |
闪存 |
FLASH - NAND |
1Gb (128M x 8) |
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并联 |
1.7 V ~ 1.95 V |
-40°C ~ 85°C(TA) |
表面贴装 |
63-VFBGA |
63-VFBGA(9x11) |
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符合限制有害物质指令(RoHS)规范要求 |
5 周 |
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MT29F2G16ABAEAWP:E |
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非易失 |
闪存 |
FLASH - NAND |
2Gb (128M x 16) |
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并联 |
2.7 V ~ 3.6 V |
0°C ~ 70°C(TA) |
表面贴装 |
48-TFSOP(0.724",18.40mm 宽) |
48-TSOP I |
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符合限制有害物质指令(RoHS)规范要求 |
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MT29F4G16ABADAWP:D TR |
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非易失 |
闪存 |
FLASH - NAND |
4Gb (256M x 16) |
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并联 |
2.7 V ~ 3.6 V |
0°C ~ 70°C(TA) |
表面贴装 |
48-TFSOP(0.724",18.40mm 宽) |
48-TSOP I |
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符合限制有害物质指令(RoHS)规范要求 |
3 周 |
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MT29F2G01ABBGDWB-IT:G TR |
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非易失 |
闪存 |
FLASH - NAND |
2Gb (2G x 1) |
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SPI |
1.7 V ~ 1.95 V |
-40°C ~ 85°C(TA) |
表面贴装 |
8-UDFN |
8-U-PDFN(8x6) |
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符合限制有害物质指令(RoHS)规范要求 |
5 周 |
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JS28F256M29EWHA |
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表面贴装 |
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- |
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256Mbit |
并行 |
TSOP |
56 |
16M x 16 位,32M x 8 位 |
NOR |
2.7 V |
3.6 V |
对称 |
16M, 32M |
110ns |
8/16Bit |
18.4 x 14 x 1mm |
14mm |
-40 °C |
85 °C |
18.4mm |
1mm |
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MT29F2G08ABAGAWP-IT:G TR |
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非易失 |
闪存 |
FLASH - NAND |
2Gb (256M x 8) |
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并联 |
2.7 V ~ 3.6 V |
-40°C ~ 85°C(TA) |
表面贴装 |
48-TFSOP(0.724",18.40mm 宽) |
48-TSOP |
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符合限制有害物质指令(RoHS)规范要求 |
5 周 |
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MT29F2G08ABBEAHC:E TR |
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非易失 |
闪存 |
FLASH - NAND |
2Gb (256M x 8) |
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并联 |
1.7 V ~ 1.95 V |
0°C ~ 70°C(TA) |
表面贴装 |
63-VFBGA |
63-VFBGA(10.5x13) |
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符合限制有害物质指令(RoHS)规范要求 |
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MT29F2G08ABAEAH4:E TR |
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非易失 |
闪存 |
FLASH - NAND |
2Gb (256M x 8) |
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并联 |
2.7 V ~ 3.6 V |
0°C ~ 70°C(TA) |
表面贴装 |
63-VFBGA |
63-VFBGA(9x11) |
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符合限制有害物质指令(RoHS)规范要求 |
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M29W256GL70N6E |
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非易失 |
闪存 |
FLASH - NOR |
256Mb (32M x 8,16M x 16) |
70ns |
70ns |
并联 |
2.7 V ~ 3.6 V |
-40°C ~ 85°C(TA) |
表面贴装 |
56-TFSOP(0.724",18.40mm 宽) |
56-TSOP |
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符合限制有害物质指令(RoHS)规范要求 |
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M29W256GH70N6E |
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非易失 |
闪存 |
FLASH - NOR |
256Mb (32M x 8,16M x 16) |
70ns |
70ns |
并联 |
2.7 V ~ 3.6 V |
-40°C ~ 85°C(TA) |
表面贴装 |
56-TFSOP(0.724",18.40mm 宽) |
56-TSOP |
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符合限制有害物质指令(RoHS)规范要求 |
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MT29F4G08ABBDAHC-IT:D TR |
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非易失 |
闪存 |
FLASH - NAND |
4Gb (512M x 8) |
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并联 |
1.7 V ~ 1.95 V |
-40°C ~ 85°C(TA) |
表面贴装 |
63-VFBGA |
63-VFBGA |
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符合限制有害物质指令(RoHS)规范要求 |
4 周 |
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MT29F4G08ABBDAHC-IT:D TR |
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非易失 |
闪存 |
FLASH - NAND |
4Gb (512M x 8) |
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并联 |
1.7 V ~ 1.95 V |
-40°C ~ 85°C(TA) |
表面贴装 |
63-VFBGA |
63-VFBGA |
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符合限制有害物质指令(RoHS)规范要求 |
4 周 |
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MT41K128M8DA-107:J |
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易失 |
DRAM |
SDRAM - DDR3L |
1Gb (128M x 8) |
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20ns |
并联 |
1.283 V ~ 1.45 V |
0°C ~ 95°C(TC) |
表面贴装 |
78-TFBGA |
78-FBGA(8x10.5) |
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符合限制有害物质指令(RoHS)规范要求 |
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MT29F1G01ABAFD12-AAT:F TR |
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非易失 |
闪存 |
FLASH - NAND |
1Gb (1G x 1) |
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SPI |
2.7 V ~ 3.6 V |
-40°C ~ 105°C(TA) |
表面贴装 |
24-TBGA |
24-TBGA(6x8) |
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符合限制有害物质指令(RoHS)规范要求 |
5 周 |
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MT48LC16M16A2P-6A:G |
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易失 |
DRAM |
SDRAM |
256Mb (16M x 16) |
12ns |
5.4ns |
并联 |
3 V ~ 3.6 V |
0°C ~ 70°C(TA) |
表面贴装 |
54-TSOP(0.400",10.16mm 宽) |
54-TSOP II |
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符合限制有害物质指令(RoHS)规范要求 |
4 周 |
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