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CY8C4247LQI-BL493 |
ARM® Cortex®-M0 |
32-位 |
48MHz |
I²C,IrDA,LIN,Microwire,智能卡,SPI,SSP,UART/USART |
蓝牙,掉电检测/复位,电容感应,LCD,LVD,POR,PWM,智能卡,智能检测,WDT |
36 |
128KB(128K x 8) |
闪存 |
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16K x 8 |
A/D 8x12b |
内部 |
-40°C ~ 85°C(TA) |
56-UFQFN 裸露焊盘 |
56-QFN(7x7) |
托盘 |
符合限制有害物质指令(RoHS)规范要求 |
12 周 |
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CY8C3246AXI-138 |
8051 |
8-位 |
50MHz |
EBI/EMI,I²C,LIN,SPI,UART/USART,USB |
电容感应,DMA,LCD,POR,PWM,WDT |
62 |
64KB(64K x 8) |
闪存 |
2K x 8 |
8K x 8 |
A/D 1x12b,D/A 1x8b |
内部 |
-40°C ~ 85°C(TA) |
100-LQFP |
100-TQFP(14x14) |
托盘 |
符合限制有害物质指令(RoHS)规范要求 |
18 周 |
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CY8C4248LTI-L485 |
ARM® Cortex®-M0 |
32-位 |
48MHz |
CAN,I²C,IrDA,LIN,Microwire,智能卡,SPI,SSP,UART/USART |
掉电检测/复位.电容感应, DMA, LCD, LVD, POR, PWM, 智能检测, WDT |
57 |
256KB(256K x 8) |
闪存 |
- |
32K x 8 |
A/D - 12b SAR |
内部 |
-40°C ~ 85°C(TA) |
68-VFQFN 裸露焊盘 |
68-QFN(8x8) |
托盘 |
符合限制有害物质指令(RoHS)规范要求 |
20 周 |
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CY8C3666LTI-201 |
8051 |
8-位 |
67MHz |
EBI/EMI,I²C,LIN,SPI,UART/USART |
电容感应,DMA,LCD,POR,PWM,WDT |
38 |
64KB(64K x 8) |
闪存 |
2K x 8 |
8K x 8 |
A/D 1x12b,D/A 2x8b |
内部 |
-40°C ~ 85°C(TA) |
68-VFQFN 裸露焊盘 |
68-QFN(8x8) |
托盘 |
符合限制有害物质指令(RoHS)规范要求 |
18 周 |
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CY8C5467LTI-LP003 |
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QFN |
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- |
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- |
微控制器 |
嵌入式 |
CMOS |
表面贴装 |
68 |
8 x 8 x 0.95mm |
8mm |
5.5 V |
85 °C |
1.71 V |
-40 °C |
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CYBT-343151-02 |
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12 x 15.5 x 1.95mm |
12mm |
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105 °C |
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-30 °C |
1 级,2 级 |
5 |
9 dBm, 12dBm |
-96.5 dBm, -95.5dBm |
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1.95mm |
15.5mm |
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CY8C4248AZI-L485 |
ARM® Cortex®-M0 |
32-位 |
48MHz |
CAN,I²C,IrDA,LIN,Microwire,智能卡,SPI,SSP,UART/USART |
掉电检测/复位.电容感应, DMA, LCD, LVD, POR, PWM, 智能检测, WDT |
53 |
256KB(256K x 8) |
闪存 |
- |
32K x 8 |
A/D - 12b SAR |
内部 |
-40°C ~ 85°C(TA) |
64-LQFP |
64-TQFP(10x10) |
托盘 |
符合限制有害物质指令(RoHS)规范要求 |
15 周 |
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CY8C3446LTI-085 |
8051 |
8-位 |
50MHz |
EBI/EMI,I²C,LIN,SPI,UART/USART,USB |
电容感应,DMA,LCD,POR,PWM,WDT |
38 |
64KB(64K x 8) |
闪存 |
2K x 8 |
8K x 8 |
A/D 1x12b,D/A 2x8b |
内部 |
-40°C ~ 85°C(TA) |
68-VFQFN 裸露焊盘 |
68-QFN(8x8) |
托盘 |
符合限制有害物质指令(RoHS)规范要求 |
18 周 |
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CYBT-353027-02 |
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CY8C3446LTI-073 |
8051 |
8-位 |
50MHz |
EBI/EMI,I²C,LIN,SPI,UART/USART,USB |
电容感应,DMA,POR,PWM,WDT |
25 |
64KB(64K x 8) |
闪存 |
2K x 8 |
8K x 8 |
A/D 1x12b,D/A 2x8b |
内部 |
-40°C ~ 85°C(TA) |
48-VFQFN 裸露焊盘 |
48-QFN(7x7) |
托盘 |
符合限制有害物质指令(RoHS)规范要求 |
18 周 |
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CY8C5667LTI-LP041 |
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QFN |
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- |
- |
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- |
微控制器 |
嵌入式 |
CMOS |
表面贴装 |
68 |
8 x 8 x 0.95mm |
8mm |
5.5 V |
85 °C |
1.71 V |
-40 °C |
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CY8C3246LTI-125 |
8051 |
8-位 |
50MHz |
EBI/EMI,I²C,LIN,SPI,UART/USART,USB |
电容感应,DMA,LCD,POR,PWM,WDT |
38 |
64KB(64K x 8) |
闪存 |
2K x 8 |
8K x 8 |
A/D 1x12b,D/A 1x8b |
内部 |
-40°C ~ 85°C(TA) |
48-VFQFN 裸露焊盘 |
48-QFN(7x7) |
托盘 |
符合限制有害物质指令(RoHS)规范要求 |
18 周 |
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CY8C3446PVI-076 |
8051 |
8-位 |
50MHz |
EBI/EMI,I²C,LIN,SPI,UART/USART,USB |
电容感应,DMA,LCD,POR,PWM,WDT |
25 |
64KB(64K x 8) |
闪存 |
2K x 8 |
8K x 8 |
A/D 1x12b,D/A 2x8b |
内部 |
-40°C ~ 85°C(TA) |
48-BSSOP(0.295",7.50mm 宽) |
48-SSOP |
管件 |
符合限制有害物质指令(RoHS)规范要求 |
18 周 |
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CY8C3246AXI-131 |
8051 |
8-位 |
50MHz |
EBI/EMI,I²C,LIN,SPI,UART/USART |
电容感应,DMA,LCD,POR,PWM,WDT |
62 |
64KB(64K x 8) |
闪存 |
2K x 8 |
8K x 8 |
A/D 1x12b,D/A 1x8b |
内部 |
-40°C ~ 85°C(TA) |
100-LQFP |
100-TQFP(14x14) |
托盘 |
符合限制有害物质指令(RoHS)规范要求 |
18 周 |
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CY8C29466-24PVXIT |
M8C |
8-位 |
24MHz |
I²C,SPI,UART/USART |
POR,PWM,WDT |
24 |
32KB(32K x 8) |
闪存 |
- |
2K x 8 |
A/D 4x14b;D/A 4x9b |
内部 |
-40°C ~ 85°C(TA) |
28-SSOP(0.209",5.30mm 宽) |
28-SSOP |
剪切带(CT) |
符合限制有害物质指令(RoHS)规范要求 |
15 周 |
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CYBT-413034-02 |
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16.3 x 12 x 1.7mm |
16.3mm |
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85°C |
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-30 °C |
2 级 |
5 |
4dBm |
-95dBm |
I2C, SPI, UART |
1.7mm |
12mm |
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CY8C5488AXI-LP120 |
ARM® Cortex®-M3 |
32-位 |
67MHz |
I²C,LIN,SPI,UART/USART,USB |
电容感应,DMA,LCD,POR,PWM,WDT |
62 |
256KB(256K x 8) |
闪存 |
2K x 8 |
64K x 8 |
A/D 1x12b,D/A 2x8b |
内部 |
-40°C ~ 85°C(TA) |
100-LQFP |
100-TQFP(14x14) |
托盘 |
符合限制有害物质指令(RoHS)规范要求 |
20 周 |
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BCM43340HKUBGT |
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-30°C ~ 85°C |
141-UFBGA,WLBGA |
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标准卷带 |
符合限制有害物质指令(RoHS)规范要求 |
15 周 |
- |
TxRx MCU |
蓝牙,WiFi |
802.11a/b/g/n,蓝牙 v4.0 |
8DPSK,DQPSK,GFSK |
2.4GHz,5GHz |
150Mbps |
11dBm |
-94.5dBm |
640kB ROM,512kB SRAM |
I²C,I²S,JTAG,SPI,UART |
1.2 V ~ 3.3 V |
44.4mA ~ 57.7mA |
254mA ~ 325mA |
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CY8C3446PVI-102 |
8051 |
8-位 |
50MHz |
CAN,EBI/EMI,I²C,LIN,SPI,UART/USART |
电容感应,DMA,LCD,POR,PWM,WDT |
25 |
64KB(64K x 8) |
闪存 |
2K x 8 |
8K x 8 |
A/D 1x12b,D/A 2x8b |
内部 |
-40°C ~ 85°C(TA) |
48-BSSOP(0.295",7.50mm 宽) |
48-SSOP |
管件 |
符合限制有害物质指令(RoHS)规范要求 |
18 周 |
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MB9BF506RBPMC-G-JNE2 |
ARM® Cortex®-M3 |
32-位 |
80MHz |
CAN,CSIO,EBI/EMI,I²C,LIN,UART/USART,USB |
DMA,LVD,POR,PWM,WDT |
100 |
512KB(512K x 8) |
闪存 |
- |
64K x 8 |
A/D 16x12b |
内部 |
-40°C ~ 85°C(TA) |
120-LQFP |
120-LQFP(16x16) |
托盘 |
符合限制有害物质指令(RoHS)规范要求 |
20 周 |
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